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TI picks 130nm for RFID chips
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31/07/2006
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Texas Instruments is producing rfid chips on a 130nm analogue process and claims lower power consumption and better chip to reader sensitivity for the parts.
The EPC Gen 2 chips, which features 192bit of memory, will be available in wafer and strap form factors. They feature an integral Schottky diode for better energy conversion. Gen 2 silicon is intended for use in the manufacture of passive RFID tag products operating at frequencies from 860 to 960MHz. ISO/IEC 18000-6c required specifications, the chips also support block write and block erase.
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Author
graham pitcher
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