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26/02/2010
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Samsung Electronics has begun mass producing what it claims to be the industry's first low power 4Gigabit ddr3 devices using 40nm class process technology.
 The South Korean memory specialist says it expects the high density memory to bring significant power savings to data centres, server systems and high end notebooks.
According to Samsung's executive vice president, memory marketing, Dong-Soo Jun, the 40nm class ddr3 has been optimized to enhance energy efficiency ratings for servers seeking to comply with new Energy Star power consumption specifications. He said: "When our 40nm class ddr3 was first introduced last July, we were well ahead of the curve for high density, high performance ddr3. Now, in just seven more months, we have introduced an ultra low power 'Green Memory' - the 4Gb ddr3, which is double the density of its predecessor. At a module density of 16Gigabyte, the 4Gb based module can save 35% in power consumption, to support customer requirements for more energy efficient designs."
Production of the 4Gb ddr3 raises the amount of memory for use in servers to 32Gigabytes per module, which Samsung claims is twice the maximum density achieved with modules based on 2Gb components.
Now production is underway, the company plans to migrate over 90% of its ddr dram production to 40nm class process technology.
Dong-Soo Jun added that by applying Samsung's 40nm 4Gb ddr3 based modules to existing server systems, dram density can be raised by double, while system life time can be extended to prolong server life span in reducing new system investment.
The 4Gb ddr3 raises the small outline dual inline memory module density to 8GB, enabling a system level density of up to 16GB for two socket modes, or 32GB for four socket models, which Samsung expects to meet much of the growing demand for high performance notebooks with advanced graphics.
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Author
Chris Shaw
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