|
TSMC unveils 28nm process in two flavours
|
29/09/2008
|
| |
TSMC is set to roll out a 28nm process as a full node technology with the option of both high k metal gate (HKMG) or silicon oxynitride (SiON) approaches to support different performance requirements. Initial production is expected in the first quarter of 2010.
“Product differentiation, faster time to market and investment optimisation are the three most important values TSMC delivers to our customers. In support of these values, we are developing this comprehensive 28nm technology family so that it offers choices, depending on the customer applications and performance requirements, ” said Jason Chen, TSMC’s vice president for worldwide sales and marketing.
The SiON based process, to be called 28LPT (low power/high performance) process, is expected to provide twice the gate density of the current 40LP process while providing up to 50% more speed or 30 to 50% lower power consumption. The 28LPT process, expected to go into initial production in the beginning of 2010, will support applications like cellular baseband, application processors, wireless connectivity and portable consumer devices.
Meanwhile, the 28HP (high performance) process is intended to support devices with demanding performance requirements, including cpus, graphic processors and fpgas. This should be in production during the first half of 2010.
Going forward, says TSMC, the HKMG technology is ‘very promising’ for device scaling at geometries beyond 28nm.
TSMC’s 28nm technologies are currently supported by alpha version design kits. The 28nm CyberShuttle, a prototyping service, will begin near the end of 2008 and features competitive cycle time and frequency. Both 28nm processes will be housed in TSMC's Fab12 (pictured) and Fab14.
|
| |
Author
Graham Pitcher
|
| |
| |
|
| Email this article |
| |
|
|
|
|