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Chartered, IBM extend cmos collaboration
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03/04/2008
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Chartered Semiconductor has extended its joint development collaboration with IBM to include 22nm bulk cmos technology. The companies originally signed a multiyear agreement in November 2002.
”This news demonstrates that a long term collaborative model for semiconductor research and development yields significant opportunities to improve application performance and cost,” claimed Gary Patton, vp of IBM Semiconductor Research & Development Center. “Going forward, it will be material science invention that will improve silicon performance while the collaborative model mitigates the escalating cost of technology and design and improves time to manufacture.”
As with previous nodes, 22nm development activities will be conducted at IBM’s 300mm fab in East Fishkill. Each company will have the ability to implement the jointly developed processes in its own manufacturing facilities.
“Our relationship with IBM … provides Chartered’s customers an assured process roadmap that leverages IBM’s technology invention in silicon,” said LC Hsia, Chartered’s senior vp of technology development. “At a time when our customers are just gaining access to the most innovative foundry process in the industry at 32nm, we can now assure them of continued customer centric solutions well into the next decade.”
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Author
Graham Pitcher
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