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IMEC boosts solar cell efficiency
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25/02/2008
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IMEC has grown a single junction GaAs solar cell on a Ge substrate and claims the device has produced a record conversion efficiency of 24.7%, as measured by the US National Renewable Energy Laboratory.
The cell, which was grown epitaxially on a Ge substrate, has an improved micro defect distribution. The cell, which has an area of 0.25cm², has an open circuit voltage of 999mV, a short circuit current of 29.7mA/cm² and a fill factor of 83.2%.
Improving the efficiency of this single junction GaAs cell is a further step in the development of a hybrid monolithic/mechanically stacked triple junction solar cell and the Belgian research institute is now targeting an efficiency of at least 35%.
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Author
Graham Pitcher
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