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Intel, ST sample phase change memory
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07/02/2008
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Intel and STMicroelectronics have begun to ship prototype phase change memories. Phase change memory (PCM) – which offers fast read and write speeds, whilst drawing less power than flash – allows for bit alterability normally seen in ram.
The chip, code named Alverstone, is a 128Mbit device built on 90nm technology. Both companies say the device will allow customers to evaluate PCM and how it can be incorporated into their future designs.
Ed Doller, who will be chief technology offier of Numonyx – the Intel/ST joint flash venture – said: “This is the most significant non volatile memory advancement in 40 years. There have been plenty of attempts to find and develop new non volatile memory technologies, yet of all the concepts, PCM provides the most compelling solution.”
Meanwhile, Intel and ST described a further breakthrough in PCM technology at ISSCC. According to the companies, they have created the first demonstrable high density, multilevel cell (MLC) large PCM device. The move from single bit per cell to MLC also brings significantly higher density at a lower cost per Mbyte making the combination of MLC and PCM a powerful development.
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Author
Graham Pitcher
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