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Researchers hit 410GHz in cmos
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06/02/2008
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Researchers from the University of Florida and Texas Instruments claim to have developed the world’s highest frequency circuit made with a common type of semiconductor transistor.
Lead researcher Professor Ken O said his team had demonstrated a 410GHz circuit using cmos technology. The previous record for cmos was 200GHz, set in February 2006. However, the marker is around 60GHz higher than the record set using indium phosphide. The circuit was made on TI’s 45nm cmos process.
“This is probably the first time in 30 years that a silicon based circuit has been shown to have a higher operating frequency than one based on indium phosphide and similar compounds,” said Prof O. “This is exciting, because if you can build chips based on these circuits, then you can build inexpensive detection and imaging systems for a range of applications. The result could reduce the cost for these systems by a factor of 100 or more.”
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Author
Graham Pitcher
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