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Flash is five times faster
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04/02/2008
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Intel and Micron Technology have unveiled a high speed NAND flash memory technology which, they say, enhances the access and transfer of data in devices that use silicon for storage.
The new technology – developed jointly and manufactured by their joint venture IM Flash Technologies – is five times faster than conventional NAND, allowing data to be transferred in a fraction of the time for computing, video, photography and other computing applications.
The NAND technology can support data reading rates of up to 200Mbyte/s and write rates of 100Mbyte/s for writing data. The companies say they have achieved these levels of performance by leveraging the ONFI 2.0 specification and a four plane architecture with higher clock speeds.
“Micron looks forward to unlocking the possibilities with high speed NAND,” said Frankie Roohparvar, pictured, Micron’s vp of NAND development. “We are working with an ecosystem of key enablers and partners to build and optimise corresponding system technologies that take advantage of its improved performance capabilities.”
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Author
Graham Pitcher
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