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IBM says high k, gate first
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12/12/2007
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IBM and its joint development partners AMD, Chartered Semiconductor Manufacturing, Freescale, Infineon, and Samsung, have claimed an innovative approach to speed the implementation of high k/metal gate technology in 32nm chips.
This approach, based on what engineers call a ‘high k, gate first’ process, is designed to provide a simpler, less time consuming way to migrate to high k metal gate technology, which improves performance and reduces power consumption.
Chips using the new technique will support a range of applications - from low power computer microchips targeted at wireless and other consumer-oriented devices to high performance microprocessors for games and enterprise computing. According to IBM, the new approach to high k/metal gate will be available in the second half of 2009.
“IBM’s alliances have demonstrated the ‘high k, gate first’ approach in a manufacturing environment, an achievement that provides a simple, scalable pathway to incorporating the high k material innovation in semiconductor development without introducing additional design complexity,” said Gary Patton, vice president of IBM’s semiconductor R&D Centre.
Pictured are some of the research team.
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Author
Graham Pitcher
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