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NEC claims 250MHz operation for mram
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30/11/2007
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NEC says it has succeeded in developing an sram compatible mram. The device is said to run at 250MHz, positioning it as the world’s fastest mram.
The device, designed and fabricated by NEC, has a capacity of 1Mbit. It features a memory cell with two transistors, a magnetic tunnel junction and a newly developed circuit scheme. Tests carried out using an internal signal monitoring circuit claim a data output time of 3.7ns from a 250MHz clock edge.
The ability of the mram to support sram speeds is said to hold the prospect that mram might be suitable for embedding in future circuits.
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Author
Graham Pitcher
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